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PBSS5130PAP,115

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PBSS5130PAP,115

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays

Current - Collector (Ic) (Max) : 1A

Product Status : Active

Transistor Type : 2 PNP (Dual)

Mounting Type : Surface Mount

Frequency - Transition : 125MHz

Package : Bulk

Series : -

Vce Saturation (Max) @ Ib, Ic : 280mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) : 30V

Supplier Device Package : 6-HUSON (2x2)

Mfr : NXP USA Inc.

Current - Collector Cutoff (Max) : 100nA (ICBO)

Power - Max : 510mW

Package / Case : 6-UFDFN Exposed Pad

Operating Temperature : 150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce : 170 @ 500mA, 2V

Base Product Number : PBSS5130

Description : NOW NEXPERIA PBSS5130PAP - SMALL

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Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)

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